(Download) UPSC IES Exam Paper - 2018 "Electronics and
Tele Communication Engineering
Paper - I"
Exam Name: Engineering Services Exam (IES)
Paper : Electronics and Tele Communication Engineering Paper - I
File Type: PDF
Electronics and Tele Communication Engineering
Paper - I
Time Allowed : Three Hours
Maximum Marks : 300
QUESTION PAPER SPECIFIC INSTRUCTIONS
Please read each of the following instructions carefully before attempting
Answers must be written in ENGLISH ONLY.
There are EIGHT questions divided in TWO Sections.
Candidate has to attempt FIVE questions in all.
Question Nos. 1 and 5 are compulsory and out of the
remaining, THREE are to be attempted choosing at least ONE
question from each Section.
The number of marks carried by a question / part is indicated against it.
Wherever any assumptions are made for answering a question, they must be
Diagrams/figures, wherever required, shall be drawn in the space provided for
answering the question itself.
Unless otherwise mentioned, symbols and notations carry their usual standard
Candidates should attempt all questions in the space prescribed under each
question in the Question-cum-Answer (QCA) Booklet. Any answer written outside
the space allotted may not be given credit.
Attempts of questions shall be counted in sequential order. Unless struck
off, attempt of a question shall be counted even if attempted partly. Any page
or portion of the page left blank in the Question-cum-Answer Booklet must be
clearly struck off.
Values of constants which may be required:
Electron charge = -1.6 x 10-19 Coulomb
Free space permeability = 4p x 10-7
Free space permittivity = (1/36p) × 10-9
Velocity of light in free space = 3 x 108 m/sec
Boltzmann constant = 1.38 x 10-23
JK Planck's constant = 6.626 × 10-34 J-s
Q1. (A) Plot the output voltage of the circuit, as shown in
Figure (a) below, which has as its input a sawtooth waveform depicted in Figure
(C) (i) Compare accuracy and precision with an example of
archery target shooting
(ii) How can time and frequency standards be disseminated ?
(D) What are Bottom-up and Top-down methods of synthesis of
nano materials ?
(E). An amplifier with an open-loop gain A = 1000 + 100 is
available. It is necessary to have an amplifier whose voltage gain varies by no
more than +- 0.1%.
(i) Find the reverse transmission factor, B, of the feedback
(ii) Find the gain with feedback.
Q2. (A) Determine the stability factor, S”, that is related
to the variation of collector current Ic with respect to
b, for the circuit shown below.
Assume silicon transistor and also ß to be much larger than
(B) An output power of 10 W is to be delivered from a class-B
push-pull amplifier. What will be the collector dissipation power of each of the
transistors used ?
Instead, if another configuration of two paralleled
transistors, operating in class A mode are used, what will be the collector
dissipation power of each transistor ? Derive the equations used.
(C) Hall measurements are conducted on a p-type semiconductor
bar 500 um wide and 20 um thick. The Hall contacts ‘A’ and 'B' are displaced 2
um with respect to each other in the direction of current flow of 3 mA. The
voltage between A and B with a magnetic field of 10-5 Wb/cm2
pointing out of the plane of the sample is 3-2 mV. When the magnetic field
direction is reversed the voltage changes to - 2.8 mV. Find the value of
mobility of holes.
Q3. (A) Draw a schematic diagram of a solar photovoltaic cell
and explain its principle of operation.
(E) A 4-pole DC generator has 1200 armature conductors and
generates 250 V on open circuit when running at a speed of 500 r.p.m. The
diameter of the pole-shoe circle is 0-35 m and the ratio of pole arc to pole
pitch is 0.7. The length of the shoes is 0.2 m. Find the mean flux density in
the air gap. Assume lap-connected armature winding.
Q4. (A) Show that the input resistance of the transistor
combination shown below is much greater than that of the individual transistors.
Why is such a combination not preferred, with three or more
transistors, to further increase the input resistance ?
(B) Determine the modified h-parameters of the circuit shown
Reduce the expressions derived above for the case if hoe
Re << 1.
(C) What is the internal power of an optical source emitting
at a peak wavelength of 1310 nm ? The radiative and non-radiative recombination
times are 40 ns and 100 ns, respectively. The drive current is 30 mA.
Q5. (A) Using mesh analysis and transformation of current
sources to voltage sources, determine the currents I, and I, in the circuit
(C) (i) Distinguish between sensors and transducers, with
(ii) What are the different constants of piezo-electric
crystals ? How are they related ?
(D) NAND implementation of a circuit is to be designed with
three data lines and a control line. When the control line is high, the circuit
is to detect when one of the data lines has 1 on it. No more than one data line
will have a 1 on it. When the control line is low, the circuit will output a 0,
regardless of what is on the data line.
(E) Consider a 'Lead' material has critical temperature 7.19
K and critical magnetic flux is 0.0803 tesla. Determine the value of temperature
at which 'lead' material must be cooled in a magnetic field of 15000 A/m for it
to be super conductive. Assume magnetic constant value is 4p
x 10-7 H/m.
Q6. (A) (i) Distinguish between thermocouples, thermistor and
(ii) Why is cold junction of thermocouples required to be
compensated and how can it be compensated ?
(iii) How can you measure flow of fluid by using ultrasonic
flow meter based on change in frequency (Doppler shift) ? Explain with necessary
(B) (i) Five measurements of the resistance of a resistor
and 101.1 W
Assume that only random errors are present.
(I) the arithmetic mean,
(II) the standard deviation of the readings,
and (III) the probable error.
(ii) Explain the signal conditioning requirements for
measurements with strain gauges and how these can be achieved.
(C) The quantum efficiency of a particular silicon photo
detector is 90% for the detection of radiation at a wavelength of 0-8 um. When
the incident optical power is 0.8 uW, the output current from the device is 10
uA. Determine the multiplication factor of the photo detector.
Q7. (A) For the circuit shown below, calculate the currents IL,
(B) Design a counter to go through states 0, 2, 4, 5, 0 ...,
using type D Flip Flops.
(C) (i) What is Spintronics ? Discuss two examples of
(ii) Find the relation between unit cell edge length 'a' and
atomic radius ‘r' for a body-centred cubic crystal.
(D) (i) The charge sensitivity of a piezo-electric transducer
is 40 pC/N. A charge amplifier is connected with the piezo-electric transducer
such that the combination of the transducer and amplifier is to have an overall
gain of 100 mV/N.
Find (I) the gain of the amplifier,
(II) the value of the feedback capacitor required to have this gain.
(ii) What is telemetry ? Classify the telemetering systems.
Q8. (A) (i) What are the requirements for the processing of
signals using LVDT ? Show a complete scheme to explain the displacement
measurements with LVDT.
(ii) A 12 A dynamometer ammeter has a full scale deflection
of 90°. The rate of mutual inductance with deflection is constant and its value
is 0.006 uH per degree. Find the deflection, if the current to
be measured is 6 A.
(B) An inductively coupled circuit is shown below. The switch
is closed at t = 0. Assuming zero initial conditions, determine the current i2(t).